Shallow trench isolation devices and methods
AssigneeTexas Instruments Incorporated
InventorsJin Zhao, Manuel Quevedo-Lopez, Louis H. Breaux
Life of this patent
Estimating the term…
Abstract
One embodiment of the present invention relates to a method of forming an isolation structure. During this method, an isolation trench is formed within a semiconductor body. After this trench is formed, it is filled by performing multiple high-frequency plasma depositions to deposit multiple dielectric layers over the semiconductor body. A first of the multiple layers is deposited at a high-frequency power of between approximately 100 watts and approximately 900 watts.
Claims15
A method of forming an isolation structure, comprising:
- forming an isolation trench within a semiconductor body;
- and
- filling the isolation trench by performing multiple high-density plasma depositions to deposit multiple dielectric layers over the semiconductor body, wherein a first of the multiple layers is deposited at a high-frequency power of between approximately 100 watts and approximately 900 watts.
A method of forming an isolation structure, comprising:
- forming an isolation trench within a semiconductor body;
- and
- forming a first dielectric layer that partially fills the isolation trench by performing a first high-density plasma deposition at a first high-frequency power of between approximately 100 watts and approximately 900 watts;
- and
- performing additional processing to further fill the isolation trench.
A semiconductor device including a shallow trench isolation region, the shallow trench isolation region comprising:
- an isolation trench recessed in a semiconductor body, the isolation trench having a bottom surface and side surfaces;
- a first dielectric layer disposed over the bottom surface of the isolation trench and having a first density;
- a second dielectric layer disposed over the first dielectric layer and having a second density that differs from the first density;
- and
- a third dielectric layer disposed over the second dielectric layer and having a density that differs from the first density.
Dependencies are inferred from the claim text.