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US 2008/0157256 A1Published application
Cmos image sensor and method of manufacturing thereof
OwnerTae-Gyu Kiminventor
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Abstract
A CMOS image sensor adapted to remove a dead zone and preventing occurrence of dark current. The CMOS image sensor can an epi layer defined by at least a photodiode region and a device isolation region formed over a semiconductor substrate; a device isolation film formed in the device isolation region; a gate electrode formed over the epi layer; and a contact plug overlapping a portion of the photodiode region and a portion of the gate electrode.
Claims20
An apparatus comprising:
- an epi layer defined by at least a photodiode region and a device isolation region formed over a semiconductor substrate;
- a device isolation film formed in the device isolation region;
- a gate electrode formed over the epi layer;
- and
- a contact plug overlapping a portion of the photodiode region and a portion of the gate electrode.
2 more elements
An apparatus comprising:
- an epi layer defined by at least a photodiode region and a device isolation region formed over a semiconductor substrate;
- a device isolation film formed in the device isolation region;
- an n-type diffusion region formed in the photodiode region of the epi layer;
- and
- a gate electrode formed over the epi layer and partially overlapping the n-type diffusion region.
2 more elements
A method comprising:
- forming an epi layer defined by at least a photodiode region and a device isolation region over a semiconductor substrate;
- forming a device isolation film in the device isolation region;
- forming a gate electrode over the epi layer;
- and then forming a contact plug overlapping a portion of the photodiode region and a portion of the gate electrode.
1 more element
Dependencies are inferred from the claim text.