Semiconductor radiation detector and radiation detection equipment
OwnerShinya Kominami, Tomoyuki Seinoinventors
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Abstract
A semiconductor radiation detector and a radiation detection equipment capable of suitably preventing the deterioration of the detection characteristics are disclosed. The semiconductor radiation detector 1 includes a semiconductor crystal 11a formed of at least one of CdTe, CdZnTe, GaAs and TlBr held between the electrodes of a cathode C and an anode A. At least one of the electrodes is a stack structure including a plurality of metals. The first layer is formed of Pt or Au, and the second layer is formed of a metal lower in hardness than Pt or Au, as the case may be, of the first layer. The second layer of In, for example, is formed by the electroless plating method. Also, a metal may be further stacked on the second layer.
Claims14
A semiconductor radiation detector formed of the semiconductor crystal of at least selected one of CdTe, CdZnTe, GaAs and TlBr held by the electrodes of the cathode and the anode,
- wherein at least a first one of the electrodes has a stack structure including a plurality of metals;
- and
- wherein a first layer is formed of Pt, and a second layer is formed of a metal lower in hardness than Pt of the first layer.
A semiconductor radiation detector formed of the semiconductor crystal of at least selected one of CdTe, CdZnTe, GaAs and TlBr held by the electrodes of the cathode and the anode,
- wherein at least a first one of the electrodes has a stack structure including a plurality of metals;
- and
- wherein a first layer is formed of Au, and a second layer is formed of a metal lower in hardness than Au of the first layer.
Dependencies are inferred from the claim text.