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US 2008/0157254 A1Published application
Compound semiconductor image sensor
AssigneeDongbu HiTek Co., Ltd.
InventorYoon Mook Kang
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Abstract
A compound image sensor includes a plurality of PN junction layers connected in parallel. The PN junction layers have different band gap energies, each corresponding to the absorption of light of blue, green, and red colors. The image sensor further includes oxide layers deposited between the PN junction layers to insulate the PN junction layers.
Claims9
A compound semiconductor image sensor, comprising:
- a plurality of PN junction layers connected in parallel;
- and
- oxide layers formed between the PN junction layers to insulate the PN junction layers.
Dependencies are inferred from the claim text.