Image sensor and method of fabricating the same
AssigneeDongbu HiTek Co., Ltd.
InventorJoon Hwang
Life of this patent
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Abstract
An image sensor includes a first photodiode formed in a semiconductor substrate at a depth reachable by red light, a second photodiode disposed on or over the first photodiode in the semiconductor substrate at a depth reachable by blue light, a third photodiode disposed adjacent to the second photodiode, a plug connected to the first photodiode, transistor structures on the semiconductor substrate and electrically connected with the first, second and third diodes, an insulating layer covering the transistor structures, and microlenses on the insulating layer.
Claims9
An image sensor comprising:
- a first photodiode in a semiconductor substrate at a depth configured to detect light of a first wavelength;
- a second photodiode over the first photodiode in the semiconductor substrate at a depth configured to detect light of a second wavelength shorter than the first wavelength;
- a third photodiode adjacent to the second photodiode;
- a plug in electrical contact with the first photodiode;
- transistor regions on the semiconductor substrate and electrically connected with the first, second and third photodiodes;
- an insulating layer covering the transistor regions;
- and
- microlenses on or over the insulating layer.
A method of fabricating an image sensor, the method comprising the steps of:
- implanting impurities into a semiconductor substrate at an implantation depth configured to detect light of a first wavelength, thereby forming a first photodiode;
- implanting impurities into the substrate above the first photodiode, at an implantation depth configured to detect light of a second wavelength shorter than the first wavelength, thereby forming a second photodiode:
- implanting impurities into a predetermined region of the substrate adjacent to the second photodiode, thereby forming a third photodiode;
- forming a plug in electrical contact with the first photodiode;
- forming transistor structures on the semiconductor substrate such that the transistor structures are electrically connected with the first, third and second photodiodes;
- forming an insulating layer covering the transistor structures;
- and
- forming microlenses on the insulating layer.
Dependencies are inferred from the claim text.