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US 2008/0157246 A1Published application
Image sensor and fabricating method thereof
AssigneeDongbu HiTek Co., Ltd.
InventorsChang Hun Han, Joon Hwang
Life of this patent
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Abstract
An image sensor may include a color filter layer on a semiconductor substrate; and a microlens on the color filter layer and including a non-photosensitive insulating layer.
Claims18
An image sensor comprising:
- a color filter layer on a semiconductor substrate;
- and
- a microlens array on the color filter layer and comprising a non-photosensitive insulating layer, the microlens array comprising a first plurality of microlenses on a first color filter in the color filter layer, and a second plurality of microlenses on a second color filter in the color filter layer, the first and second pluralities of microlenses having different thicknesses from each other.
An image sensor comprising:
- a color filter layer on a semiconductor substrate;
- and
- a microlens array on the color filter layer and comprising a non-photosensitive insulating layer, the microlens array comprising a first microlens on a red color filter in the color filter layer, a second microlens on a green color filter in the color filter layer, and a third microlens on a blue color filter in the color filter layer, wherein the first, second, and third microlenses have the same thickness or different thicknesses from each other.
A method of fabricating an image sensor comprising:
- forming a non-photosensitive insulating layer on a color filter layer;
- forming a photosensitive layer on the non-photosensitive insulating layer;
- forming sacrificial microlenses by patterning the photosensitive layer;
- forming a microlens array from or in the non-photosensitive insulating layer by etching the sacrificial microlenses and the non-photosensitive insulating layer.
1 more element
Dependencies are inferred from the claim text.