Image sensor and method of manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorsYoung-Je Yun, Jin-Ho PARK, Sang-Wook RYU
Life of this patent
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Abstract
An image sensor and a method of manufacturing the same capable of improving image quality by preventing the generation of a lens bridge formed due to a mutual connection of neighboring microlenses. The image sensor can include a semiconductor substrate having a plurality of photodiodes formed thereon; an insulation layer formed over the semiconductor substrate; a color filter layer formed over the insulation layer; a planarization layer formed over the whole surface including the color filter layer and having a plularity of concave regions and a convex regions repeatedly arranged in a pixel period; and a microlens formed over each of the concave regions and the convex regions.
Claims20
An apparatus comprising:
- a semiconductor substrate including a plurality of photodiodes;
- an insulation layer formed over the semiconductor substrate;
- a color filter layer formed over the insulation layer;
- a planarization layer having a plurality of alternating concave regions and convex regions in an uppermost surface thereof formed over the color filter layer;
- and
- a plurality of microlens formed over the concave regions and the convex regions.
A method comprising:
- providing a semiconductor substrate having a plurality of photodiodes formed therein;
- forming an insulating layer over the semiconductor substrate;
- forming a color filter layer over the insulating layer and corresponding to the plurality of photodiodes;
- forming a plurality of concave regions and a plurality of convex regions repeatedly arranged in a pixel period over the color filter layer;
- and then
- forming a plurality of microlenses over the convex regions and the concave regions.
A method comprising:
- providing a semiconductor substrate having a plurality of photodiodes formed therein;
- forming an insulating layer over the semiconductor substrate;
- forming a color filter layer over the insulating layer and corresponding to the plurality of photodiodes;
- sequentially forming a first planarization layer over the color filter layer and a second planarization layer over the first planarization layer;
- patterning the second planarization layer to expose regions of the uppermost surface of the first planarization layer, wherein each one of the exposed regions of the uppermost surface of the first planarization layer includes a concave region and the uppermost surface of the patterned second planarization layer includes a convex region;
- and then
- forming a microlens over each one of the convex region and the concave region.
Dependencies are inferred from the claim text.