Image sensor and method of fabricating the same

A method comprising:

• depositing a first gate insulation material over a semiconductor substrate;
• forming a first gate insulation layer having an opening at a center portion thereof by patterning the first gate insulation material;
• sequentially depositing a second gate insulation material and a gate electrode material over the semiconductor substrate including the first gate insulation layer;
• sequentially forming a second gate insulation layer and a gate electrode by patterning the second gate insulation material and the gate electrode material;
• forming a photodiode in the semiconductor substrate at one side of the gate electrode by implanting a plurality of ions in the semiconductor substrate;
• and then
• forming a floating diffusion region in the semiconductor substrate at another side of the gate electrode opposite to the photodiode by implanting ions into the semiconductor substrate.

A method comprising:

• forming a first gate insulation layer having an opening at a center portion thereof over a semiconductor substrate;
• sequentially forming a second gate insulation layer and a gate electrode over the semiconductor substrate including the first gate insulation layer;
• forming a photodiode in the semiconductor substrate laterally adjacent to one side of the gate electrode;
• forming a floating diffusion region in the semiconductor substrate laterally adjacent to another side of the gate electrode opposite to the photodiode and then
• forming a channel in the semiconductor substrate to electrically connect the floating diffusion region to the photodiode.