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US 2008/0157230 A1Published application
Semiconductor Device and Method of Fabricating the Same
AssigneeDongbu HiTek Co., Ltd.
InventorHAN CHOON LEE
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Abstract
A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a gate insulating layer with a high dielectric constant (k) and a polysilicon layer on a gate metal layer. The gate metal layer can include silicon atoms. Electron mobility can be improved, and production residue and damage can be minimized.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- a gate insulating layer on the semiconductor substrate;
- a gate metal layer on the gate insulating layer, the gate metal layer comprising silicon;
- and
- a polysilicon layer on the gate metal layer.
2 more elements
A method of fabricating a semiconductor device, comprising:
- forming a gate insulating layer on a semiconductor substrate;
- forming a preliminary metal layer on the gate insulating layer;
- flowing a gas on the preliminary metal layer, wherein the gas comprises silicon;
- performing an annealing process on the preliminary metal layer to form a gate metal layer comprising silicon;
- forming a polysilicon layer on the gate metal layer;
- and
- patterning the polysilicon layer, the gate metal layer, and the gate insulating layer to form a gate pattern.
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Dependencies are inferred from the claim text.