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US 2008/0157229 A1Published application
Semiconductor Device and Fabricating Method Thereof
OwnerJong Won Suninventor
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Abstract
A semiconductor device and a fabricating method thereof are provided. The method includes forming a Tetraethyl Orthosilicate (TEOS) layer on a semiconductor substrate, and performing a heat treatment on the TEOS layer to shrink the LEOS layer, thereby forming a gate oxide layer of a shrunken TEOS layer.
Claims11
A method of fabricating a semiconductor device, the method comprising:
- forming a Tetraethyl Orthosilicate (TEOS) layer having a first thickness on a semiconductor substrate;
- and
- performing a heat treatment process on the TEOS layer to shrink the TEOS layer having the first thickness into a TEOS layer having a second thickness, thereby forming a gate oxide layer.
A semiconductor device, comprising:
- a semiconductor substrate;
- and
- a gate oxide layer on the substrate, the gate oxide layer comprising Tetraethyl Orthosilicate (TEOS).
Dependencies are inferred from the claim text.