Semiconductor device and manufacturing process therefor
AssigneeElpida Memory, Inc.
InventorKazutaka Manabe
Life of this patent
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Abstract
An objective of the present invention is to provide a more miniaturized semiconductor device while maintaining low-resist contact. A semiconductor device comprises transistors Tr1, Tr2, a first contact 13 and second contacts 10. The transistors Tr1, Tr2 are formed on a semiconductor substrate 1 and adjacent to each other. The first contact 13 is formed between the transistors Tr1, Tr2 in a self-alignment structure, connected to a common source to the transistors Tr1, Tr2 and contains a metal. The second contacts 10 are connected to the drains in the transistors Tr1, Tr2, respectively and contain a metal.
Claims11
A semiconductor device, comprising
- two planar type transistors comprising gate electrodes and sidewalls formed on a semiconductor substrate and a common source for the two transistors;
- a first contact containing a metal between the sidewalls of the two transistors such that the first contact is in contact with the sidewalls of the two transistors, which is electrically connected to the common source;
- and
- two second contacts containing a metal, which are electrically connected to the respective drains for the two transistors.
A process for manufacturing a semiconductor device comprising the steps of
- (a) forming two planar type transistors comprising gate electrodes and sidewalls on a semiconductor substrate and a common source for the two transistors;
- (b) forming an interlayer insulating film such that the interlayer insulating film covers the semiconductor substrate and the two transistors, and forming a first contact hole in a self-alignment manner in a position corresponding to the common source in the interlayer insulating film such that the sidewalls are exposed;
- (c) forming a first contact such that a metal-containing substance fills the first contact hole;
- (d) forming two second contact holes in positions corresponding to the respective drains of the two transistors in the interlayer insulating film;
- and
- (e) forming two second contacts such that a metal-containing substance fills the two second contact holes.
Dependencies are inferred from the claim text.