Integrated circuit having a plurality of mosfet devices

A method for manufacturing an integrated circuit, comprising the steps of:

• providing a plurality of MOSFET devices, the integrated circuit having a reduced difference, between the MOSFET devices, of a value of Ion,
• the plurality of MOSFET devices each having a respective PC pitch, an RX width and a CA strap ratio associated therewith;
• and
• selecting a value of the CA strap ratio of each MOSFET device to provide a value of Ion substantially equal to a predetermined reference value, the predetermined reference value being the same for each MOSFET device.

An integrated circuit structure comprising:

• a plurality of MOSFET devices, each MOSFET device having associated therewith:
• a value of a performance parameter of the MOSFET device;
• and
• a value of a first and second structural parameters of the MOSFET device,
• wherein the performance parameter of each MOSFET device is related to the first and second structural parameters of the MOSFET device according to an identical predetermined function, and one of the first and second structural parameters is selected so that the value of the performance parameter of each MOSFET device is substantially equal.

An integrated circuit structure comprising:

• a plurality of MOSFET devices, each device having associated therewith:
• a value of an on current (Ion) of the MOSFET device;
• a value of a PC pitch of the MOSFET device;
• a value of an RX width of the MOSFET device;
• and
• a value of a CA strap ratio of the MOSFET device,
• wherein the value of Ion of each MOSFET device is related to the values of PC pitch, RX width and CA strap ratio according to an identical predetermined function, and one of the values of PC pitch, RX width and CA strap ratio is selected so that the value of Ion of each device is substantially equal.