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US 2008/0157220 A1Published application
Semiconductor Device and Manufacturing Method Thereof
OwnerSung Joong Jooinventor
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Abstract
A semiconductor device and a manufacturing method thereof are provided. A gate electrode and source/drain areas are disposed on a semiconductor substrate, and an interlayer dielectric layer is on the gate electrode, the source/drain areas, and the semiconductor substrate. Metal silicide layers are disposed in the gate electrode and the source/drain areas at regions exposed by contact holes.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a gate electrode on a semiconductor substrate;
- forming source/drain areas on the semiconductor substrate;
- forming an interlayer dielectric layer on the semiconductor substrate and the gate electrode;
- forming contact holes in the interlayer dielectric layer exposing the gate electrode and the source/drain areas;
- and
- forming metal silicide layers in the gate electrode and the source/drain areas exposed by the contact holes.
3 more elements
A semiconductor device, comprising:
- a gate electrode on a semiconductor substrate;
- source/drain areas on the semiconductor substrate at sides of the gate electrode;
- an interlayer dielectric layer on the semiconductor substrate including the gate electrode;
- contacts passing through the interlayer dielectric layer to the gate electrode and the source/drain areas, respectively;
- and
- metal silicide layers in the gate electrode and the source/drain areas only at portions corresponding to the contacts.
3 more elements
Dependencies are inferred from the claim text.