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OwnerTsuyoshi FUJIWARA, Masahiro Ushiyama +3inventors
InventorsTsuyoshi FUJIWARA, Masahiro Ushiyama, Katsuhiko Ichinose, Naohumi Ohashi, Tetsuo Saito
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In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.
A semiconductor device, comprising:
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device, which comprises a first silicon nitride film for self alignment processing and a second silicon nitride film for passivation, wherein between an Si—H/Si—N bonds ratio R1 according to FT-IR analysis of the first silicon nitride film and an Si—H/Si—N bonds ratio R2 according to FT-IR analysis of the second silicon nitride film, there is a relationship of R1<R2.
Dependencies are inferred from the claim text.