Semiconductor device and method of fabricating the same, and nor gate circuit using the semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorJung-Ho Ahn
Life of this patent
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Abstract
A semiconductor device including a semiconductor substrate having source/drain regions, a gate electrode formed on and/or over the semiconductor substrate, spacers formed against sidewalls of the gate electrode, an interlayer insulating layer formed over the semiconductor substrate and the gate electrode and having a plurality of contact holes formed therein, and contact plugs formed within the contact holes. The contact plugs can include a first contact plug and a second contact plug electrically connected to the gate electrode, and a third contact plug and a fourth contact plug electrically connected to the source/drain regions.
Claims20
An apparatus comprising:
- a semiconductor substrate having source/drain regions;
- a gate electrode formed over the semiconductor substrate;
- spacers formed against sidewalls of the gate electrode;
- an interlayer insulating layer formed over the semiconductor substrate and the gate electrode and having a plurality of contact holes formed therein;
- and
- contact plugs formed in the contact holes,
- wherein the contact plugs include a first contact plug and a second contact plug each electrically connected to the gate electrode, and a third contact plug and a fourth contact plug each electrically connected to the source/drain regions.
A method comprising:
- forming a channel region and source/drain regions in a semiconductor substrate;
- forming a gate electrode over the semiconductor substrate;
- forming spacers against sidewalls of the gate electrode;
- forming an interlayer insulating layer over the semiconductor substrate including the gate electrode and the spacers;
- forming a plurality of contact holes in the interlayer insulating layer including a first contact hole and a second contact hole exposing the uppermost surface of the gate electrode, and a third contact hole and a fourth contact hole exposing the uppermost surface of the source/drain regions;
- and then forming a contact plug in each one of the plurality of contact holes.
A method comprising:
- providing a switching element including a transistor for switching an output terminal and an input terminal including a first input terminal and a second input terminal, wherein the transistor includes a gate connected to the first input terminal and the second input terminal, a source being grounded and a drain connected to the output terminal;
- and then
- simultaneously applying a first input signal through the first input terminal and a second input signal through the second input terminal to the gate of the transistor.
Dependencies are inferred from the claim text.