Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a silicon semiconductor substrate;
• a complementary type MISFET circuit including an n-channel MISFET and a p-channel MISFET, which are formed on a surface region of the silicon semiconductor substrate;
• an insulation film formed on the surface region of the silicon semiconductor substrate in which the complementary type MISFET circuit is formed;
• a first contact hole formed in the insulation film, an n-channel impurity diffused region of the n-channel MISFET being exposed at a bottom of the first contact hole;
• a first metal silicide layer formed on the bottom of the first contact hole, the first metal silicide layer being provided by a reaction of the n-channel impurity diffused region with a first metal;
• a second contact hole formed in the insulation film, a p-channel impurity diffused region of the p-channel MISFET being exposed at a bottom of the second contact hole;
• a second metal silicide layer formed on the bottom of the second contact hole, the second metal silicide layer being provided by a reaction of the p-channel impurity diffused region with a second metal;
• and
• a work function of the second metal silicide layer being higher than that of the first metal silicide layer.