Integrated circuit and method of forming the same

A memory device, comprising:

• a plurality of memory cells, each of the memory cells including a storage element and an access transistor, wherein the access transistors are transistors of a first type comprising a first gate electrode formed in a first gate groove that is defined in a semiconductor substrate, the first gate electrode completely filling a space between two adjacent first isolation trenches;
• and
• transistors of a second type comprising a second gate electrode formed in a second gate groove defined in the semiconductor substrate and partially filling a space between two adjacent second isolation trenches, substrate portions being arranged between the second gate electrode and adjacent isolation trenches, respectively.

An integrated circuit, comprising:

• a transistor of a first type comprising a first gate electrode formed in a first gate groove defined in a semiconductor substrate;
• and
• a transistor of a second type comprising first and second source/drain regions, a second gate electrode, and a channel region comprising first and second fin-like channel portions extending between the first and second source/drain regions, the second gate electrode being adjacent to at least one side of each of the first and second fin-like channel portions.

A method of manufacturing an integrated circuit, comprising:

• forming a transistor of a first type comprising a first gate electrode formed in a first gate groove that is defined in a semiconductor substrate, the first gate electrode completely filling a space between two adjacent first isolation trenches;
• and
• forming a transistor of a second type comprising a second gate electrode formed in a second gate groove defined in the semiconductor substrate, the second gate electrode partially filling a space between two adjacent second isolation trenches, substrate portions being arranged between the second gate electrode and the adjacent second isolation trenches, respectively.