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US 2008/0157207 A1Published application
Tri-gate device with conformal pvd workfunction metal on its three-dimensional body and fabrication method thereof
AssigneeIntel Corporation
InventorsWilly Rachmady, Brian S. Doyle, Jack T. Kavalieros, Uday Shah
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Abstract
A method of fabricating a tri-gate semiconductor device comprising a semiconductor body having an upper surface and side surfaces and a metal gate that has an approximately equal thickness on the upper and side surfaces. Embodiments of a tri-gate device with conformal physical vapor deposition workfunction metal on its three-dimensional body are described herein. Other embodiments may be described and claimed.
Claims7
A semiconductor apparatus comprising:
- a semiconductor body having a top surface and laterally opposite sidewalls;
- a metal gate with approximately equal thickness on the top surface and the laterally opposite sidewalls, wherein the metal gate contains columnar grains.
A semiconductor apparatus comprising:
- a semiconductor body having a top surface and laterally opposite sidewalls;
- a dielectric layer on the top surface and the laterally opposite sidewalls of the semiconductor body;
- a metal gate layer with approximately equal thickness on a top surface and laterally opposite sidewalls of the dielectric layer, wherein the metal gate layer contains columnar grains;
- and
- a polysilicon layer on the metal gate layer.
2 more elements
Dependencies are inferred from the claim text.