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US 2008/0157206 A1Published application
Semiconductor device and manufacturing method of the same
AssigneeElpida Memory, Inc.
InventorNoriaki MIKASA
Life of this patent
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Abstract
A manufacturing method of a semiconductor device includes a step of defining an element region by etching a semiconductor substrate using a first dielectric film as a mask, a step of reducing the first dielectric film by isotropic etching, a step of forming a side wall on a side surface of the reduced first dielectric film, a step of removing the first dielectric film, and a step of forming a trench in the element region by etching using the side wall as a mask to form a plurality of fin portions at the element region.
Claims8
A semiconductor device comprising:
- an element region defined by etching a semiconductor substrate using an dielectric film as an etching mask;
- and
- a plurality of fin portions formed by etching the element region using a side wall as an etching mask, the side wall formed on a side surface of a reduced dielectric film formed by reducing the dielectric film.
A method for manufacturing a semiconductor device, comprising steps of:
- defining an element region by etching a semiconductor substrate using a first dielectric film as a mask;
- reducing the first dielectric film by isotropic etching to form a reduced dielectric film;
- forming a side wall on a side surface of the reduced dielectric film;
- removing the reduced dielectric film;
- and
- forming a trench in the element region by etching using the side wall as a mask to form a plurality of fin portions at the element region.
3 more elements
Dependencies are inferred from the claim text.