Semiconductor device with gate structure and method for fabricating the semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsMin-Gyu SUNG, Hong-Seon Yang, Heung-Jae Cho, Yong-Soo Kim, Kwan-Yong Lim
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Abstract
A gate structure of a semiconductor device includes an intermediate structure, wherein the intermediate structure includes a titanium layer and a tungsten silicide layer. A method for forming a gate structure of a semiconductor device includes forming a polysilicon-based electrode. An intermediate structure, which includes a titanium layer and a tungsten silicide layer, is formed over the polysilicon-based electrode. A metal electrode is formed over the intermediate structure.
Claims32
A semiconductor device, comprising:
- a substrate having an upper surface and a lower surface;
- a gate structure provided proximate to the upper surface of the substrate, the gate structure comprising a gate insulation layer, a first electrode over the gate insulation layer, an intermediate structure over the first electrode, and a second electrode over the intermediate structure,
- wherein the intermediate structure comprises a first Ti layer including titanium and a second W layer including tungsten and silicon and being provided over the first Ti layer.
A method for forming a gate structure of a semiconductor device, the method comprising:
- forming a first electrode proximate to an upper surface of a substrate;
- forming an intermediate structure over the first electrode, the intermediate structure comprising a titanium layer and a tungsten silicide layer;
- and
- forming a second electrode over the intermediate structure.
Dependencies are inferred from the claim text.