DMOS device and method for fabricating the same
AssigneeDongbu HiTek Co., Ltd.
InventorDuck Ki Jang
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Abstract
A DMOS device and a method for fabricating the same are provided. A drift region and a well region are formed simultaneously to provide a DMOS device with the drift and well regions having the same depth. This DMOS device includes a high voltage transistor area and a low voltage transistor area, a drift diffused region formed in the high voltage transistor area, and a well region formed in the low voltage transistor area. A drift diffused region and a well region in the low voltage area are formed simultaneously to reduce the number of ion implantation processes, thereby simplifying the manufacturing process.
Claims10
A Double-diffused Metal-Oxide-Semiconductor (DMOS) device comprising:
- a high voltage transistor area and a low voltage transistor area;
- a drift diffused region formed in the high voltage transistor area;
- and
- a well region formed in the low voltage transistor area,
- wherein the drift diffused region and the well region have substantially the same depth.
A method for fabricating a DMOS device, the method comprising:
- defining a low voltage transistor area and a high voltage transistor area in a semiconductor substrate;
- and
- forming a drift diffused region in the high voltage transistor area and forming a well region in the low voltage transistor area simultaneously.
Dependencies are inferred from the claim text.