Semiconductor device and method for fabricating the same
AssigneeDongbu HiTek Co., Ltd.
InventorSung Man Pang
Life of this patent
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Abstract
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate of a first conductivity type, an epitaxial layer of the first conductivity type on the semiconductor substrate, a base region of a second conductivity type on the epitaxial layer, the base region including subregions spaced apart from one another by a predetermined distance, a source region of the first conductivity type on the base region, a drain region of the first conductivity type between the subregions of the base region, a trench penetrating through the source region and the base region, a first gate conductive layer within the trench, and a second gate conductive layer on an exposed portion of the base region.
Claims17
A semiconductor device, comprising:
- a semiconductor substrate of a first conductivity type;
- an epitaxial layer of the first conductivity type on the semiconductor substrate;
- a base region of a second conductivity type on the epitaxial layer, the base region including subregions spaced apart from one another by a predetermined distance;
- a source region of the first conductivity type on the base region;
- a drain region of the first conductivity type between the subregions of the base region;
- a trench penetrating through the source region and the base region;
- a first gate conductive layer within the trench;
- and
- a second gate conductive layer on an exposed portion of the base region.
A method for fabricating a semiconductor device, comprising:
- forming an epitaxial layer of a first conductivity type on a semiconductor substrate of the first conductivity type;
- forming a base region of a second conductivity type on the epitaxial layer, the base region including a plurality of subregions spaced apart from one another;
- forming a source region of the first conductivity type in the base region, and a heavily-doped region of the first conductivity type between the subregions of the base region;
- forming a trench passing through the source region and the base region;
- and
- forming a first gate conductive layer within the trench, and a second gate conductive layer on the base region.
A semiconductor device, comprising:
- a first gate region vertical to a substrate;
- a second gate region horizontal to the substrate;
- and
- a drain region connected to the substrate.
Dependencies are inferred from the claim text.