Back to results
US 2008/0157192 A1Published application
Trench gate-type mosfet device and method for manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorSung Man PANG
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first conduction type semiconductor substrate, a second conduction type base region in the substrate, a high concentration first conduction type source region in the base region, and first and second trenches. The source region is formed in an opposite side of the substrate. The first and second trenches pass through the source region and the base region, and the first and second trenches have different widths and shapes, respectively.
Claims17
A semiconductor device comprising:
- a first conduction type semiconductor substrate;
- a second conduction type base region in the substrate;
- a high concentration first conduction type source region in the base region, the source region being in an opposite side of the substrate;
- and
- first and second trenches passing through the source region and the base region, respectively, the first and second trenches having different widths and shapes.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- selectively implanting second conduction type impurities into a first conduction type semiconductor substrate to form a second conduction type base region having a predetermined depth in the substrate;
- forming a high concentration first conduction type source region in a surface of the base region that is opposite to the substrate;
- and
- forming first and second trenches passing through the source region and the base region, respectively, and having different widths and shapes.
1 more element
A semiconductor device comprising:
- a substrate;
- an epitaxial layer;
- a gate and a source region;
- the gate comprising a plurality of trenches alternately arranged and having different widths.
1 more element
Dependencies are inferred from the claim text.