Non-volatile memory device and fabrication method thereof
AssigneeHynix Semiconductor Inc.
InventorsJae Mun Kim, Jae Hyoung Koo, Dong Ho Lee, Kwon Hong, Woo Ri Jeong, Hee Soo Kim, Seung Woo Shin
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Abstract
A non-volatile memory device and a fabrication method thereof. A high-k layer is formed between nitrogen-containing insulating layers. Accordingly, an interface reaction between an underlying oxide layer and the high-k insulating layer or between the oxide layer and a floating gate or a control gate can be prohibited and the electrical characteristics of the high-k layer can be improved, and a non-volatile memory device with high performance and high reliability can be fabricated.
Claims23
A non-volatile memory device, comprising:
- a tunnel insulating layer formed on a semiconductor substrate;
- a floating gate formed on the tunnel insulating layer;
- a first nitrogen-containing insulating layer formed on the floating gate;
- a first insulating layer formed on the first nitrogen-containing insulating layer;
- a high dielectric (high-k) insulating layer formed over the first insulating layer;
- a second insulating layer formed over the high-k insulating layer;
- a second nitrogen-containing insulating layer formed on the second insulating layer;
- and
- a control gate formed over the second nitrogen-containing insulating layer.
A non-volatile memory device, comprising:
- a tunnel insulating layer formed on a semiconductor substrate;
- a floating gate formed on the tunnel insulating layer;
- a first insulating layer formed over the floating gate;
- a first nitrogen-containing insulating layer formed on the first insulating layer;
- a high-k insulating layer formed over the first nitrogen-containing insulating layer;
- a second nitrogen-containing insulating layer formed on the high-k insulating layer;
- a second insulating layer the first insulating layer the second nitrogen-containing insulating layer;
- and
- a control gate formed over the second insulating layer.
A method of fabricating a non-volatile memory device, the method comprising:
- providing a semiconductor substrate;
- sequentially forming a tunnel insulating layer and a first conductive layer over the semiconductor substrate;
- forming a first nitrogen-containing insulating layer formed on the first conductive layer;
- forming a first insulating layer on the first nitrogen-containing insulating layer;
- forming a high-k insulating layer over the first insulating layer;
- forming a second insulating layer over the high-k insulating layer;
- forming a second nitrogen-containing insulating layer on the second insulating layer;
- and
- forming a second conductive layer on the second nitrogen-containing insulating layer.
A method of fabricating a non-volatile memory device, the method comprising:
- providing a semiconductor substrate;
- sequentially forming a tunnel insulating layer and a first conductive layer over the semiconductor substrate;
- forming a first insulating layer over the first conductive layer;
- forming a first nitrogen-containing insulating layer on the first insulating layer;
- forming a high-k insulating layer over the first nitrogen-containing insulating layer;
- forming a second nitrogen-containing insulating layer on the high-k insulating layer;
- forming a second insulating layer over the second nitrogen-containing insulating layer;
- and
- forming a second conductive layer over the second insulating layer.
Dependencies are inferred from the claim text.