Back to results
US 2008/0157179 A1Published application
Method for fabricating nonvolatile memory device
OwnerDong-Oog Kiminventor
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device can include source selection lines, word lines, and a drain selection line formed over a substrate; spacers formed on sidewalls of the source selection lines and the drain selection line; source/drain electrodes having a lightly doped drain structure formed in the substrate; a buffer layer formed over the substrate including over the spacers; and a passivation layer composed of nitrogen gas formed over the buffer layer.
Claims20
A method comprising:
- forming source selection lines, word lines, and a drain selection line over a substrate;
- forming impurity regions in active regions of the substrate;
- forming spacers on sidewalls of the source selection lines and the drain selection line;
- forming a buffer layer over the substrate including over the spacers;
- forming a passivation layer over the buffer layer;
- and then forming source/drain electrodes by implanting a high concentration into the impurity regions using the spacers, the source selection lines, and the drain selection line as ion implantation masks,
- wherein the impurity regions includes a source region of the source selection lines and a drain region of the drain selection line.
4 more elements
An apparatus comprising:
- a pair of source selection lines, a pair of word lines, and a drain selection line formed over a substrate;
- impurity regions formed in active regions of the substrate;
- spacers formed on sidewalls of the source selection lines and the drain selection line;
- source/drain electrodes having a lightly doped drain structure formed in the substrate;
- a buffer layer formed over the substrate including the spacers;
- and
- a passivation layer formed over the buffer layer.
4 more elements
A method comprising:
- forming a pair of source selection lines, a pair of word lines and a drain selection line over a substrate;
- forming spacers on sidewalls of the source selection lines and the drain selection line;
- forming a buffer layer over the substrate including the source selection lines, the word lines and the drain selection line;
- forming a passivation layer over the buffer layer by performing a first annealing process;
- forming source/drain electrodes having a lightly doped drain structure in the substrate;
- and then increasing the density of the passivation layer by performing a second annealing process on the substrate.
3 more elements
Dependencies are inferred from the claim text.