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US 2008/0157178 A1Published application
Flash memory device and method for manufacturing thereof
OwnerDong Oog Kiminventor
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Abstract
A flash memory device and fabricating method thereof are provided. A device isolating layer, a tunnel oxide film, and a floating gate can be formed on a substrate. An oxide-nitride-oxide (ONO) layer can be formed over the substrate, and a control gate can be formed on the ONO layer. A spacer can be formed of a high-temperature oxide film and a nitride film at sidewalls of the control gate.
Claims8
A method for manufacturing a flash memory device, comprising:
- forming a device isolating layer on a substrate;
- forming a tunnel oxide film and a floating gate on the substrate;
- forming an oxide-nitride-oxide (ONO) layer on the substrate;
- forming a control gate on the ONO layer;
- forming a high-temperature oxide film on the substrate and the control gate;
- forming a nitride film on the high-temperature oxide film;
- and
- forming a spacer by etching the high-temperature oxide film and the nitride film.
5 more elements
The method according to claim 17 wherein the high-temperature oxide film has a thickness of about 100 Å to about 200 Å.
A flash memory device, comprising:
- a substrate provided with a device isolating layer;
- a tunnel oxide film and a floating gate on the substrate;
- an ONO layer on the floating gate;
- a control gate on the ONO layer;
- and
- a spacer on sidewalls of the control gate, wherein the spacer comprises a high-temperature oxide film and a nitride film.
3 more elements
Dependencies are inferred from the claim text.