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US 2008/0157177 A1Published application
Flash Device and the Manufacturing Method
AssigneeDongbu HiTek Co., Ltd.
InventorHYUN JU LIM
Life of this patent
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Abstract
A flash device and a manufacturing method thereof are provided. An ONO pattern can be formed on a floating gate, and a control gate can be formed on the ONO pattern. The ONO pattern can be formed with a portion that projects farther out than the sides of the floating gate and the control gate.
Claims16
A flash memory device, comprising:
- a floating gate on a tunnel oxide film pattern on a semiconductor substrate;
- an oxide-nitride-oxide (ONO) pattern on the floating gate;
- and
- a control gate on the ONO pattern;
- wherein the ONO pattern has a portion that projects out farther than a side of the floating gate and a side of the control gate.
2 more elements
A method of manufacturing a flash memory device, comprising:
- forming a tunnel oxide film on a semiconductor substrate;
- forming an auxiliary floating polysilicon layer on the tunnel oxide film;
- forming an ONO film on the auxiliary floating polysilicon layer;
- forming a control polysilicon layer on the ONO film;
- forming a hard mask layer pattern on the control polysilicon layer;
- forming a control gate by patterning the control polysilicon layer using the hard mask layer pattern as a etch mask;
- forming an auxiliary ONO pattern by patterning the ONO film;
- and
- forming a floating gate by patterning the auxiliary floating polysilicon layer using an etchant with a high etching selectivity to polysilicon.
6 more elements
Dependencies are inferred from the claim text.