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US 2008/0157171 A1Published application
Dielectric barrier for nanocrystals
AssigneeIntel Corporation
InventorsPrashant Majhi, Kyu S. Min, Wilman Tsai
Life of this patent
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Abstract
Electronic apparatus, systems, and methods of forming such electronic apparatus and systems include non-insulating nanocrystals disposed on a dielectric stack, where the non-insulating nanocrystals are arranged to store electric charge. The dielectric stack includes two dielectric layers having different electron barriers such that the non-insulating nanocrystals may be disposed on the dielectric layer having the lower electron barrier.
Claims30
An apparatus comprising:
- a first layer of a first dielectric material, the first dielectric material having a first electron barrier;
- a second layer of a second dielectric material disposed above the first layer, the second dielectric material having an electron barrier lower than the electron barrier of the first dielectric material, the first layer and the second layer structured as part of a dielectric stack;
- non-insulating nanocrystals disposed on the second layer, the non-insulating nanocrystals to store electric charge.
A system comprising:
- a controller;
- a bus;
- a communications interface coupled to the bus.
- a flash memory operatively coupled to the controller through the bus, the flash memory having an array of memory cells, each memory cell including:
- a first layer of a first dielectric material, the first dielectric material having
- a first electron barrier;
- a second layer of a second dielectric material disposed above the first layer, the second dielectric material having an electron barrier lower than the electron barrier of the first dielectric material, the first layer and the second layer structured as part of a dielectric stack;
- and
- non-insulating nanocrystals disposed on the second layer, the non-insulating nanocrystals to store electric charge.
6 more elements
A method comprising:
- forming a first layer of a first dielectric material, the first dielectric material having a first electron barrier;
- forming a second layer of a second dielectric material disposed above the first layer, the second dielectric material having an electron barrier lower than the electron barrier of the first dielectric material, the first layer and the second layer structured as part of a dielectric stack;
- and
- forming non-insulating nanocrystals disposed on the second layer, the non-insulating nanocrystals to store electric charge.
1 more element
Dependencies are inferred from the claim text.