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US 2008/0157162 A1Published application
Method of combining floating body cell and logic transistors
OwnerBrian S. Doyle, Suman Datta +2inventors
InventorsBrian S. Doyle, Suman Datta, Jack Kavalieros, Robert Chau
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Abstract
An integrated circuit having both floating body cells and logic devices fabricated in a bulk silicon substrate is described. The floating body cells have electrically floating bodies formed by oxidizing a lower portion of the cell bodies to electrically isolate them from the substrate.
Claims20
A method comprising:
- forming a plurality of bodies from a bulk silicon substrate;
- forming spacers on opposite sides of the bodies such that the bottom of the spacers are spaced apart from the substrate;
- and
- oxidizing the bodies at regions where the spacers are spaced apart from the substrate.
1 more element
A method comprising:
- forming first and second bodies from a bulk silicon substrate;
- forming spacers on opposite sides of the first bodies such that the bottom of the spacers are spaced apart from the substrate;
- and
- oxidizing the first bodies in a region where the spacers are spaced apart from the substrate so as to cause the first bodies to be electrically insulated from the substrate.
1 more element
An integrated circuit comprising:
- a plurality of first bodies each extending from a silicon substrate and having a first upper region defining a floating silicon body insulated from a second region of the body by a silicon dioxide region;
- trench isolation oxide disposed between the first bodies to a level approximately equal to a lower extent of the silicon dioxide regions;
- second bodies extending continuously upward from the substrate to a level approximately equal to the upper level of the first bodies;
- first and second gates disposed on opposite sides of the first bodies, defining floating body memory cells;
- and
- third gate structures disposed on opposite sides and top of the second bodies defining logic devices.
3 more elements
Dependencies are inferred from the claim text.