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US 2008/0157149 A1Published application
CMOS image sensor and method for manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorSeung Hyun Kim
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Abstract
A CMOS image sensor may include a gate electrode on a gate insulating layer in an active region of a semiconductor substrate; a photodiode region in the semiconductor substrate on one side of the gate electrode; a floating diffusion region in the semiconductor substrate on another side of the gate electrode; and a complementary impurity region in the semiconductor substrate on the other side of the gate electrode, overlapping with the floating diffusion region.
Claims10
A CMOS image sensor comprising:
- a gate electrode on a gate insulating layer in an active region of a semiconductor substrate;
- a photodiode region in the semiconductor substrate on one side of the gate electrode;
- a floating diffusion region in the semiconductor substrate on another side of the gate electrode;
- and
- a complementary impurity region in the semiconductor substrate on the other side of the gate electrode overlapping with the floating diffusion region.
2 more elements
A method for manufacturing a CMOS image sensor comprising the steps of:
- forming a gate electrode on a gate insulating layer in a predetermined region of a semiconductor substrate;
- forming a photodiode region in the semiconductor substrate on one side of the gate electrode;
- forming an insulating sidewall on sides of the gate electrode;
- and
- forming a floating diffusion region in the semiconductor substrate on another side of the gate electrode;
- and
- forming a complementary impurity region in the semiconductor substrate overlapping the floating diffusion region.
4 more elements
Dependencies are inferred from the claim text.