Image sensor and method for fabricating the same
OwnerJung-Kyu Kim, Yeo-Jo Yuninventors
Life of this patent
Estimating the term…
Abstract
An image sensor includes: a photodiode and a transistor formed in a semiconductor substrate that is defined as a device isolation region and an active region; a first interlayer insulating film formed over the semiconductor substrate; a metal wire formed over the first interlayer insulating film; a second interlayer insulating film formed over the first interlayer insulating film including the metal wire; and a color filter layer and a micro lens formed over the second interlayer insulating film. The first interlayer insulating film includes a first tetraethyl orthosilicate (TEOS) film, a first hydrogen silsequioxane (HSQ) film, and a second tetraethyl orthosilicate film, which are sequentially laminated.
Claims18
An apparatus comprising:
- a photodiode and a transistor formed in a semiconductor substrate defined by a device isolation region and an active region;
- a first interlayer insulating film formed over the semiconductor substrate;
- a metal wire formed over the first interlayer insulating film;
- a second interlayer insulating film formed over the first interlayer insulating film including the metal wire;
- and
- a color filter layer and a micro lens formed over the second interlayer insulating film,
- wherein the first interlayer insulating film includes a multilayer structure.
A method comprising:
- forming a photodiode and a transistor in a semiconductor substrate defining a device isolation region and an active region;
- forming a first interlayer insulating film over the semiconductor substrate;
- forming a metal wire over the first interlayer insulating film;
- forming a second interlayer insulating film over the first interlayer insulating film including the metal wire;
- and then
- forming a color filter layer and a micro lens over the second interlayer insulating film,
- wherein the first interlayer insulating film has a multilayer structure.
A method comprising:
- providing a semiconductor substrate having a photodiode and a transistor formed therein, the semiconductor substrate defining a device isolation region and an active region;
- forming a first multilayer interlayer insulating film including a first tetraethyl orthosilicate film, a first hydrogen silsequioxane film, and a second tetraethyl orthosilicate film over the semiconductor substrate;
- forming a metal wire over the first interlayer insulating film;
- forming a second multilayer interlayer insulating film including a third tetraethyl orthosilicate film, a second hydrogen silsequioxane film, and a fourth tetraethyl orthosilicate film over the first multilayer interlayer insulating film including the metal wire;
- and then
- forming a color filter layer and a micro lens over the second multilayer interlayer insulating film.
Dependencies are inferred from the claim text.