US 2008/0157145 A1 · Method of fabricating image sensor

Abstract

A method of fabricating a CMOS image sensor can include forming a first conductive type epitaxial layer on a heavily doped first conductive type substrate, forming a device isolation layer on a prescribed portion of the epitaxial layer, forming a gate electrode on an active area of the epitaxial layer defined by the device isolation layer, forming a second conductive type first diffusion area to be connected to a surface of the epitaxial layer by carrying out ion implantation on the epitaxial layer for forming a photodiode therein, and forming a second conductive type second diffusion area by carrying out ion implantation on a boundary between the gate electrode and the first diffusion area. Accordingly, the gate and the depletion region of the photodiode are connected, thereby suppressing noise generation by enabling electrons trapped by defects to move freely via the depletion area.

Claims20

Dependent claims

A method comprising:

forming an epitaxial layer over a semiconductor substrate;
forming a device isolation layer in a prescribed portion of the epitaxial layer;
forming a gate electrode over an active region of the epitaxial layer defined by the device isolation layer;
forming a second conductive type first diffusion area to be connected to a surface of the epitaxial layer by carrying out ion implantation on the epitaxial layer for forming a photodiode therein;
and then
forming a second conductive type second diffusion area by carrying out ion implantation on a boundary between the gate electrode and the first diffusion region.

3 more elements

Dependencies are inferred from the claim text.

Method of fabricating image sensor

Life of this patent

Method of fabricating image sensor

Life of this patent

Abstract

Claims20