Method for manufacturing of cmos image sensor
AssigneeDongbu HiTek Co., Ltd.
InventorJeong Su Park
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Abstract
The present invention relates to a method for manufacturing a CMOS image sensor. The method comprises forming a photodiode and a transistor on a semiconductor substrate which is divided into a pixel region and a peripheral region, forming a plurality of oxide films and metal wiring on the semiconductor substrate, depositing a silicon oxynitride (SiON) layer on the oxide film, performing an array etch in the pixel region in order to reduce the optical length of the pixel region, depositing a silicon nitride (SiN) layer over the etched pixel region and silicon oxynitride layer, and forming a micro lens on the silicon nitride layer. Advantageously, the method prevents the generation of circular defects in the peripheral region while maintaining the refractive index in the pixel region.
Claims12
A method for manufacturing a CMOS image sensor comprising:
- forming a photodiode and a transistor on a semiconductor substrate divided into a pixel region and a peripheral region;
- forming a plurality of oxide films and metal wiring on the semiconductor substrate;
- depositing silicon oxynitride (SiON) layer on the oxide film;
- performing an array etch on silicon oxynitride layer in order to reduce an optical length of the pixel region;
- depositing a silicon nitride (SiN) layer over pixel region and silicon oxynitride layer of the peripheral region;
- and
- forming a micro lens on the silicon nitride layer.
A CMOS image sensor comprising:
- a semiconductor substrate divided into a pixel region and a peripheral region;
- a photodiode formed in the semiconductor substrate;
- a transistor formed in the semiconductor substrate;
- a plurality of oxide films and metal wiring formed on the semiconductor substrate;
- a silicon oxynitride (SiON) layer formed on the oxide film in the peripheral region;
- a silicon nitride (SiN) layer over pixel region and silicon oxynitride layer of the peripheral region;
- and
- a micro lens formed on the silicon nitride layer.
Dependencies are inferred from the claim text.