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US 2008/0157140 A1Published application
Image sensor and fabricating method thereof
OwnerEun-Sang Choinventor
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Abstract
An image sensor including a semiconductor substrate having a photodiode, at least one interlayer dielectric layer formed over the semiconductor substrate and an oxide layer passes through the interlayer dielectric layer.
Claims20
An apparatus comprising:
- a semiconductor substrate including a photodiode;
- at least one interlayer dielectric layer formed over the semiconductor substrate;
- and
- an oxide layer passing through the interlayer dielectric layer.
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A method comprising:
- forming at least one interlayer dielectric layer over a semiconductor substrate where a photodiode is formed;
- forming at least one through hole in the interlayer dielectric layer;
- and
- filling the through hole with an oxide layer.
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Dependencies are inferred from the claim text.