Cmos image sensor and method of manufacturing thereof
OwnerKeun-Hyuk Liminventor
Life of this patent
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Abstract
A CMOS image sensor and a method of manufacturing thereof is capable of preventing a feed-through phenomenon. A CMOS image sensor includes a reset transistor which may include an epi-layer formed over a semiconductor substrate. The reset transistor also includes a channel layer formed over the epi-layer to form a channel. A trap area may be formed in a central portion of the reset transistor. A gate electrode may be formed over the epi-layer with a gate insulating film interposed therebetween. A gate spacer may be formed over both sidewalls of the gate electrode. A diffusion area may be formed at both sides of the gate spacer.
Claims20
An apparatus comprising:
- an epi-layer formed over a semiconductor substrate;
- a channel layer formed over the epi-layer;
- a gate insulating film formed over the epi-layer;
- a gate electrode formed over the gate insulating film;
- a gate spacer formed over sidewalls of the gate electrode;
- a diffusion area formed at both sides of the gate spacer;
- and
- a trap area formed under a central portion of the gate.
A method comprising:
- forming an epi-layer over a semiconductor substrate;
- forming a channel layer over the epi-layer to form a channel;
- forming a photoresist pattern for exposing a portion of the channel layer;
- implanting dopant ions into the exposed channel layer and epi-layer to form a trap area;
- forming a gate insulating film over the channel layer in which the trap area is formed;
- forming a gate electrode over the gate insulating film;
- forming a gate spacer over both sidewalls of the gate electrode;
- and
- implanting n-type ions into the epi-layer located at both sides of the gate spacer to form a diffusion area.
Dependencies are inferred from the claim text.