Cmos image sensor and fabricating method thereof
AssigneeDongbu HiTek Co., Ltd.
InventorChang Eun LEE
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Abstract
A CMOS image sensor and method the same are disclosed. The method comprises forming an insulating interlayer including a plurality of photodiodes on a semiconductor substrate, forming a plurality of metal lines within the insulating interlayer, sequentially forming an oxide layer and a passivation layer on the insulating interlayer, forming a TEOS layer on the passivation layer, forming a planarization layer on a portion of the TEOS layer, and forming a microlens on the planarization layer.
Claims14
A CMOS image sensor comprising:
- an insulating interlayer formed on a semiconductor substrate, the insulating interlayer including a plurality of photodiodes;
- a plurality of metal lines formed within the insulating interlayer;
- an oxide layer formed on the insulating interlayer;
- a passivation layer formed on the oxide layer;
- a TEOS layer formed on a portion of the passivation layer;
- a planarization layer formed on the TEOS layer;
- and
- a plurality of microlenses formed on the planarization layer.
A method of fabricating a CMOS image sensor, comprising:
- forming an insulating interlayer including a plurality of photodiodes on a semiconductor substrate;
- forming a plurality of metal lines within the insulating interlayer;
- sequentially forming an oxide layer and a passivation layer on the insulating interlayer;
- forming a TEOS layer on the passivation layer;
- forming a planarization layer on a portion of the TEOS layer;
- and
- forming a microlens on the planarization layer.
A method of fabricating a CMOS image sensor, comprising:
- forming an insulating interlayer including a plurality of photodiodes on a semiconductor substrate;
- forming a plurality of metal lines within the insulating interlayer;
- sequentially forming an oxide layer and a passivation layer on the insulating interlayer;
- forming a TEOS layer on the passivation layer;
- forming a planarization layer on a portion of the TEOS layer where a microlens will be formed;
- forming the microlens on the planarization layer;
- and
- removing the TEOS layer except in an area beneath the microlens.
Dependencies are inferred from the claim text.