Method for forming the gate of a transistor
OwnerDae-Young Kiminventor
Life of this patent
Estimating the term…
Abstract
A method of forming a gate of a transistor can include forming a nitride film over a semiconductor substrate; forming a photoresist pattern defining a gate channel region of a transistor over the nitride film; forming a nitride pattern by etching the nitride film using the photoresist pattern as a mask; removing the photoresist pattern; forming an oxide film over the semiconductor substrate using a thermal oxidation process; removing the nitride pattern to expose a portion of the surface of the semiconductor substrate corresponding to the removed nitride pattern; and then forming a recessed pattern corresponding to the gate channel region in the exposed semiconductor substrate.
Claims20
A method comprising:
- forming a nitride film over a semiconductor substrate;
- forming a photoresist pattern defining a gate channel region of a transistor over the nitride film;
- forming a nitride pattern by etching the nitride film using the photoresist pattern as a mask;
- removing the photoresist pattern;
- forming an oxide film over the semiconductor substrate using a thermal oxidation process;
- removing the nitride pattern to expose a portion of the surface of the semiconductor substrate corresponding to the removed nitride pattern;
- and then
- forming a recessed pattern corresponding to the gate channel region in the exposed semiconductor substrate.
A method comprising:
- forming an oxide film over a semiconductor substrate;
- forming a photoresist pattern defining a gate channel region of a transistor over the oxide film;
- forming an oxide film pattern by etching the oxide film using the photoresist pattern as a mask;
- removing the photoresist pattern;
- forming a nitride film over the semiconductor substrate by performing a plasma nitridation treatment;
- removing the oxide pattern to expose a portion of the surface of the semiconductor substrate corresponding to the removed oxide pattern;
- and then
- forming a recessed pattern corresponding to the gate channel region in the exposed semiconductor substrate.
An apparatus comprising:
- a semiconductor substrate having a recessed pattern formed therein;
- and
- a transistor formed over the recessed pattern,
- wherein the transistor includes a gate oxide film formed over the recessed pattern and a gate poly formed over the gate oxide film.
Dependencies are inferred from the claim text.