Methods for producing multiple distinct transistors from a single semiconductor
AssigneeThe Johns Hopkins University
InventorsHoward E. Katz, Cheng Huang
Life of this patent
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Abstract
Provided are methods for producing multiple distinct transistors from a single semiconductor layer, and apparatus incorporating transistors so produced.
Claims20
A method, comprising the acts of:
- a. depositing a dielectric layer on a substrate;
- b. charging the dielectric layer to create at least two regions in the dielectric layer having different charge levels;
- c. depositing a semiconductor layer on the surface of the charged dielectric layer such that all or a part of the deposited semiconductor layer is in contact with all or a part of the deposited dielectric layer;
- and
- d. depositing at least one electrode over at least one of the regions in the dielectric layer.
A method, comprising:
- a. depositing a dielectric layer on a substrate;
- b. charging the dielectric layer to create at least two regions in the dielectric layer having different charge levels;
- c. depositing a semiconductor layer on the surface of the charged dielectric layer;
- and
- d. depositing at least two electrodes such that at least one of the electrodes is disposed on a region different from the region on which at least one of the other electrodes is disposed.
An apparatus, comprising at least two field effect transistors, wherein each field effect transistor shares the same semiconductor layer and dielectric layer, the dielectric layer being in contact with said semiconductor layer and separating said semiconductor layer from a substrate with at least one gate contact, but wherein each field effect transistor comprises a distinct region of quasipermanent charge in the shared dielectric layer.
Dependencies are inferred from the claim text.