Epitaxial group III nitride layer on (001)-oriented group IV semiconductor

A multilayer structure with an epitaxial group III nitride layer on either a (001) surface of a group IV semiconductor or a surface of the group IV semiconductor which has a misorientation of less than 8 degrees relative to a (001) orientation,

• an epitaxial group III nitride layer being deposited on the surface of the group IV semiconductor, which epitaxial group III nitride layer comprises crystallites of a first and a second type with in each case different interatomic distances in each case two mutually perpendicular crystallographic directions parallel to the surface,
• the crystallites of the two types differing from one another in that the in each case smaller interatomic distance occurs in mutually perpendicular crystallographic directions relative to the surface of the group IV semiconductor, and
• the crystallites of a first one of the two types occurring in the group III nitride layer only up to a certain distance from the surface of the group IV semiconductor, and there with a lesser frequency than the crystallites of the second type.

Use of a substrate with either a (001) surface of a group IV semiconductor or a surface of the group IV semiconductor which has a misorientation of less than 8 degrees relative to a (001) orientation to produce at least one epitaxial group III nitride layer thereon, the surface of the group IV semiconductor having a surface reconstruction in which atoms of the group IV semiconductor are arranged in two mutually perpendicular crystallographic directions parallel to the surface at different distances from one another.

A method of producing a multilayer structure with an epitaxial group III nitride layer, having the steps of:

• providing a substrate with either a (001) surface of a group IV semiconductor or a surface of the group IV semiconductor which has a misorientation of less than 4 degrees relative to a (001) orientation, the surface of the group IV semiconductor having a surface reconstruction in which atoms of the group IV semiconductor are arranged in two mutually perpendicular crystallographic directions parallel to the surface at different distances from one another,
• depositing a group III nitride layer on the substrate.

A substrate with either a (001) surface of a group IV semiconductor or a surface of the group IV semiconductor which has a misorientation of less than 8 degrees relative to a (001) orientation, the surface of the group IV semiconductor having a surface reconstruction in which atoms of the group IV semiconductor are arranged in two mutually perpendicular crystallographic directions parallel to the surface at different distances from one another, and the surface of the group IV semiconductor having stripe-shaped trench structures or ridge structures oriented in a <110> direction and consisting of a small number of Si1-x-yGexCy atomic layers.