Integrated semiconductor structure including a heterojunction bipolar transistor and a schottky diode
AssigneeThe Boeing Company
InventorBerinder P.S. BRAR
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Abstract
An integrated semiconductor structure includes a heterojunction bipolar transistor and a Schottky diode. The structure has a substrate, the heterojunction bipolar transistor overlying and contacting the substrate, wherein the heterojunction bipolar transistor includes a transistor collector layer, and a Schottky diode overlying the substrate and overlying the transistor collector layer. The Schottky diode includes a Schottky diode barrier layer structure that desirably is not of the same material, doping, and thickness as the transistor collector layer.
Claims10
An integrated semiconductor structure including a heterojunction bipolar transistor and a Schottky diode, the semiconductor structure comprising
- a substrate;
- the heterojunction bipolar transistor overlying and contacting the substrate, wherein the heterojunction bipolar transistor includes a transistor collector layer;
- and
- the Schottky diode overlying the substrate and overlying the transistor collector layer, wherein the Schottky diode includes a Schottky diode barrier layer structure that is not of the same material, doping, and thickness as the transistor collector layer.
7 The integrated semiconductor structure of claim 6, wherein the Schottky diode comprises
- an emitter layer overlying and contacting the transistor base layer,
- a diode contact layer overlying and contacting the emitter layer,
- a diode cathode ohmic contact to the diode contact layer,
- the Schottky diode barrier layer structure overlying and contacting the diode contact layer, and
- a diode anode contact to the Schottky diode barrier layer structure.
A method for preparing an integrated semiconductor structure including a heterojunction bipolar transistor and a Schottky diode, the method including the steps of
- providing a substrate;
- depositing the heterojunction bipolar transistor overlying and contacting the substrate, wherein the heterojunction bipolar transistor includes a transistor collector layer;
- and
- depositing the Schottky diode overlying t he substrate and overlying the transistor collector layer, wherein the Schottky diode includes a Schottky diode barrier layer structure that is not of the same material as the transistor collector layer.
Dependencies are inferred from the claim text.