Light-emitting diode and method for manufacturing the same

A method for manufacturing a light-emitting diode, comprising:

• providing a growth substrate;
• forming an N-type semiconductor layer on the growth substrate;
• forming an active layer on the N-type semiconductor layer;
• forming a P-type semiconductor layer on the active layer;
• forming a window layer on the P-type semiconductor layer, wherein a thickness of the window layer is substantially at least 50 μm, and the window layer is composed of a transparent conductive material;
• removing the growth substrate;
• forming a P-type electrode on a portion of the window layer;
• forming a reflective metal layer on the N-type semiconductor layer, wherein the reflective metal layer and the active layer are on two opposite sides of the N-type semiconductor layer;
• providing a conductive substrate including a first surface and a second surface opposite to the first surface, wherein a metal bonding layer is formed on the first surface of the conductive substrate;
• and
• performing a bonding step to bond the reflective metal layer to the metal bonding layer.