Nitride semiconductor laser element
AssigneeNichia Corporation
InventorsShingo Masui, Tomonori Morizumi
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Abstract
A nitride semiconductor laser element comprises a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, and an electrode that is electrically connected with the nitride semiconductor layer, wherein there is provided an insulating protective film produced by forming a monocrystalline first film or a first film containing hexagonal crystals, and extending from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge, and a second film containing a polycrystalline or amorphous substance, from the nitride semiconductor layer side, in this order.
Claims18
A nitride semiconductor laser element comprising a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, and an electrode that is electrically connected with the nitride semiconductor layer,
- wherein there is provided an insulating protective film produced by forming a monocrystalline first film extending from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge, and a second film containing a polycrystalline or amorphous substance, from the nitride semiconductor layer side, in this order.
A nitride semiconductor laser element comprising a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, and an electrode that is electrically connected with the nitride semiconductor layer,
- wherein there is provided an insulating protective film produced by forming a first film containing hexagonal crystals and extending from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge, and a second film containing a polycrystalline or amorphous substance, from the nitride semiconductor layer side, in this order.
A method for manufacturing a nitride semiconductor laser element comprising a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, and an electrode that is electrically connected with the nitride semiconductor layer;
- the method comprising
- dry-etching the surface of the nitride semiconductor and then wet-etching to form a ridge,
- forming a monocrystalline first film from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge, and
- forming a second film containing polycrystalline or an amorphous substance over the first film, thereby forming an insulating protective film.
Dependencies are inferred from the claim text.