Light-emitting diode structure and method for manufacturing the same

A light-emitting diode (LED) structure comprising:

• a substrate;
• a first confining layer having a first electrical property, wherein the first confining layer is disposed on the substrate;
• a light-emitting epitaxial structure disposed on a first portion of the first confining layer, wherein the light-emitting epitaxial structure comprises;
• an active layer disposed on the first portion of the confining layer;
• and
• a second confining layer having a second electrical property, wherein the second confining layer is disposed on the active layer, and the first electrical property is opposite to the second electrical property;
• a protrusive structure disposed on a second portion of the first confining layer, wherein the protrusive structure is spaced from the light-emitting epitaxial structure by a predetermined gap exposing the first confining layer, and the material layers forming the protrusive structure are substantially equivalent to the material layers forming the light-emitting epitaxial structure with respect to material species and arrangement sequence, and a thickness of the material layers forming the protrusive structure is smaller than or equal to a thickness of the material layers forming the light-emitting epitaxial structure;
• a n-type electrode pad covering the protrusive structure, wherein the n-type electrode pad is electrically connected to the first confining layer;
• and
• a p-type electrode pad disposed on the second confining layer.