System and method for producing synthetic diamond
AssigneeApollo Diamond, Inc.
InventorsRobert C. Linares, Patrick J. Doering
Life of this patent
Estimating the term…
Abstract
Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described., as well as a system for use in performing such a method, and articles incorporating such a composition.
Claims24
A synthetic diamond comprising a first monocrystalline diamond layer and a second monocrystalline diamond layer, the layers formed on a compatible substrate, with the first layer in contact with the second layer, the layers formed by chemical vapor deposition, the first diamond layer formed from a carbon source, the second diamond layer comprising at least one impurity or at least one carbon isotope wherein the concentrations of the impurity or carbon isotope in the second monocrystalline diamond layer are selected such that the lattice constant of the first layer and the lattice constant of the second layer are substantially identical and the properties of the layers are substantially identical.
A synthetic diamond comprising a first monocrystalline diamond layer and a second monocrystalline diamond layer formed on a compatible substrate, with the first layer in contact with the second layer, the layers formed by chemical vapor deposition, the first diamond layer formed from a carbon source, the second diamond layer comprising at least one impurity or at least one carbon isotope wherein the concentrations of the impurity or carbon isotope in the second monocrystalline diamond layer are selected such that the lattice constant of the first layer and the lattice constant of the second layer are mismatched such that the lattice constant is substantially less than or substantially greater than the lattice constant of the first layer by an amount sufficient to obtain a measurable difference in properties between the layers.
A method of forming a synthetic diamond comprising forming a first monocrystalline diamond layer and a second monocrystalline diamond layer formed on a compatible substrate, with the first layer in contact with the second layer, the layers formed by chemical vapor deposition, the first diamond layer formed from a carbon source, the second diamond layer comprising at least one impurity or at least one carbon isotope wherein the concentrations of the impurity or carbon isotope in the second monocrystalline diamond layer are selected such that the lattice constant of the first layer and the lattice constant of the second layer are substantially identical and the properties of the layers are substantially identical.
A method of forming a synthetic diamond comprising forming a first monocrystalline diamond layer and a second monocrystalline diamond layer formed on a compatible substrate, with the first layer in contact with the second layer, the layers formed by chemical vapor deposition, the first diamond layer formed from a carbon source, the second diamond layer comprising at least one impurity or at least one carbon isotope wherein the concentrations of the impurity or carbon isotope in the second monocrystalline diamond layer are selected such that the lattice constant of the first layer and the lattice constant of the second layer are mismatched such that the lattice constant is substantially less than or substantially greater than the lattice constant of the first layer by an amount sufficient to obtain a measurable difference in properties between the layers.
Dependencies are inferred from the claim text.