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US 2008/0157095 A1Published application
Semiconductor Devices Having Single Crystalline Silicon Layers
AssigneeSamsung Electronics Co., Ltd.
InventorsYong-Hoon Son, Yu-Gyun Shin
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Abstract
Methods of manufacturing semiconductor devices having at least one single crystal silicon layer are provided. Pursuant to these methods, a first seed layer that includes silicon is formed. A first non-single crystalline silicon layer is then formed on the first seed layer. The first non-single crystalline silicon layer is irradiated with a laser to transform the first non-single crystalline silicon layer into a first single crystalline silicon layer. Corresponding semiconductor devices are also disclosed.
Claims9
A semiconductor device comprising:
- a first seed layer including silicon;
- and
- a first single crystalline silicon layer formed on the first seed layer by transforming a crystal structure of an amorphous silicon layer into a single crystal structure using the silicon in the first seed layer as a seed for crystallization during a phase change of the amorphous silicon by a laser.
A semiconductor device comprising:
- a first single crystalline silicon layer;
- a first insulation layer on the first single crystalline silicon layer, the first insulation layer including an opening that exposes a surface of the first single crystalline silicon layer;
- a first seed layer in the opening, the first seed including silicon;
- and
- a second single crystalline silicon layer is provided on the first insulation layer by transforming, a crystal structure of an amorphous silicon layer including an amorphous material into a single crystal structure using the silicon in the first seed layer as a seed for crystallization during a phase change of the amorphous silicon induced by a laser.
2 more elements
Dependencies are inferred from the claim text.