Nonvolatile semiconductor memory
AssigneeKabushiki Kaisha Toshiba
InventorsFumitaka Arai, Ichiro Mizushima, Makoto Mizukami
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Abstract
A nonvolatile semiconductor memory according to an aspect of the invention comprises a semiconductor substrate which has an SOI region and an epitaxial region at its surface, a buried oxide film arranged on the semiconductor substrate in the SOI region, an SOI layer arranged on the buried oxide film, a plurality of memory cells arranged on the SOI layer, an epitaxial layer arranged in the epitaxial region, and a select gate transistor arranged on the epitaxial layer, wherein the SOI layer is made of a microcrystalline layer.
Claims20
A nonvolatile semiconductor memory comprising:
- a semiconductor substrate which has an SOI region and an epitaxial region at its surface;
- a buried oxide film arranged on the semiconductor substrate in the SOI region;
- an SOI layer arranged on the buried oxide film;
- a plurality of memory cells arranged on the SOI layer;
- an epitaxial layer arranged in the epitaxial region;
- and
- a select gate transistor arranged on the epitaxial layer,
- wherein the SOI layer is made of a microcrystalline layer.
A nonvolatile semiconductor memory comprising:
- a semiconductor substrate;
- a pillar-shaped semiconductor layer which extends in a vertical direction toward the surface of the semiconductor substrate;
- a plurality of memory cells which are arranged in the vertical direction on the side face of the semiconductor layer and each of which has a charge storage layer and a control gate electrode,
- wherein the pillar-shaped semiconductor layer is made of a microcrystalline layer.
Dependencies are inferred from the claim text.