Methods of fabricating a semiconductor device using a cyclic selective epitaxial growth technique and semiconductor devices formed using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDong-Suk Shin, Hong-Jae Shin
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Abstract
Devices and methods of fabricating a conductive pattern of such devices comprise a non-single crystalline semiconductor pattern formed on a single crystalline semiconductor substrate, an insulating spacer formed on a sidewall of the non-single crystalline semiconductor pattern, the non-single crystalline semiconductor pattern selectively recessed using a cyclic selective epitaxial growth (SEG) process, and a silicide layer formed on the recessed non-single crystalline semiconductor pattern.
Claims28
A method of fabricating a conductive pattern, comprising:
- forming a non-single crystalline semiconductor pattern on a single crystalline semiconductor substrate;
- forming an insulating spacer on a sidewall of the non-single crystalline semiconductor pattern;
- selectively recessing the non-single crystalline semiconductor pattern using a cyclic selective epitaxial growth (SEG) process;
- and
- forming a silicide layer on the recessed non-single crystalline semiconductor pattern.
A method of fabricating a semiconductor device, comprising:
- providing a semiconductor substrate having first and second regions, the first and second regions having first and second conductivity types respectively;
- forming a first conductive pattern and a second conductive pattern on the first region and the second region of the semiconductor substrate, respectively;
- forming a first insulating spacer and a second insulating spacer on a sidewall of the first conductive pattern and a sidewall of the second conductive pattern, respectively;
- selectively recessing the first and second conductive patterns using a cyclic selective epitaxial growth (SEG) process;
- and
- forming a first silicide layer and a second silicide layer on the first recessed conductive pattern and the second recessed conductive pattern respectively.
A semiconductor device, comprising:
- a semiconductor substrate having a first region and a second region;
- a first conductive pattern and a second conductive pattern disposed on the first and second regions respectively, the first conductive pattern having a thickness that is less than that of the second conductive pattern;
- a first silicide layer and a second silicide layer on the first conductive pattern and the second conductive pattern, respectively;
- a first insulating spacer on a sidewall of the first conductive pattern and a sidewall of the first silicide layer;
- and
- a second insulating spacer on a sidewall of the second conductive pattern and a sidewall of the second silicide layer.
Dependencies are inferred from the claim text.