Transplanted epitaxial regrowth for fabricating large area substrates for electronic devices

An device comprising:

• a substrate;
• a first gallium nitride layer grown on the substrate from a gallium nitride single crystal seed layer or an aluminum nitride single crystal seed layer;
• and
• a device layer grown on the first epitaxial layer, wherein the first gallium nitride layer grown forms a bond with the substrate and the device layer comprises one or more of the following devices:
• a field effect transistor;
• and
• a light emitting diode.

An epitaxial layer regrowth method, comprising:

• depositing a gallium nitride single crystal seed layer on a support wafer;
• implanting an hydrogen exfoliation layer in the single crystal seed layer;
• etching trenches in a portion of the single crystal seed layer and a portion of the exfoliation layer;
• bonding the single crystal seed layer, on the support wafer, to a silicon carbide substrate;
• removing the support wafer and the hydrogen exfoliation layer leaving behind one or more gallium nitride single crystal seeds, generated from the single crystal gallium nitride seed layer, on the substrate;
• growing a gallium nitride epitaxial layer on the substrate from the gallium nitride single crystal seeds;
• and
• growing a device layer on the grown gallium nitride epitaxial layer.

An epitaxial layer regrowth method, comprising:

• depositing a single crystal seed layer on a support wafer, wherein the support wafer comprises an etch stop;
• etching trenches in a portion of the single crystal seed layer and a portion of the etch stop;
• bonding the single crystal seed layer, on the support wafer, to a substrate;
• removing the support wafer and the etch stop layer leaving behind one or more single crystal seeds, generated from the single crystal seed layer, on the substrate;
• growing a first epitaxial layer on the substrate from the single crystal seeds;
• and
• growing a device layer on the grown first epitaxial layer.