Image sensor and method for manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorSeoung Hyun Kim
Life of this patent
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Abstract
Provided is an image sensor. The image sensor includes a semiconductor substrate, photodiode structures, color filters, and microlenses. The semiconductor substrate includes a first region having pixel regions and a second region around the first region. The pixel regions are arranged in a matrix configuration. Each of the photodiode structures has a photodiode in each of the pixel regions. The color filters are disposed on or over the photodiode structures, the color filters correspond to the pixel regions, respectively, and have different areas corresponding to incident angles of light.
Claims12
An image sensor comprising:
- a semiconductor substrate including a first region having pixel regions and a second region around the first region, the pixel regions having a matrix configuration;
- a photodiode in each of the pixel regions;
- color filters corresponding to the pixel regions, respectively, having a different area corresponding to an incident angle of light;
- and
- microlenses on the color filters.
A method for manufacturing an image sensor, the method comprising:
- preparing a semiconductor substrate including a first region having pixel regions and a second region around the first region, the pixel regions having a matrix configuration;
- forming photodiode structures, each including a photodiode in each of the pixel regions;
- forming color filters on the photodiode structures, the color filters corresponding to the pixel regions, respectively, where the color filters in the second region have a different area than the color filters in the first region depending on an incident angle of light;
- and
- forming microlenses on the color filters.
Dependencies are inferred from the claim text.