Method for manufacturing thin film transistor
AssigneeAu Optronics Corporation
InventorChang-Wei Liu
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Abstract
A method for manufacturing a thin film transistor (TFT) is disclosed. The method is achieved by forming and defining a source and a drain of a thin film transistor through two lithographic processes cycles so that the channel length (L) of the thin film transistor can be reduced to 1.5 to 4.0 μm. Besides, the Ion current of the thin film transistor is increased as the channel length (L) is decreased. Therefore, the component area of the thin film transistor is decreased as the channel width (W) is decreased. Thus, the aperture ratio of the TFT-LCD can be increased due to the decreased component area of the thin film transistor.
Claims23
A method for manufacturing a thin film transistor (TFT), comprising:
- providing a substrate;
- forming a patterned first metal layer, a patterned semiconductor layer, and a second metal layer on the substrate in sequence, wherein the patterned first metal layer comprises a gate;
- forming a patterned first photoresist layer on the second metal layer, wherein part of the first photoresist layer is placed over one side of the first metal layer;
- forming a patterned second photoresist layer on the second metal layer, wherein part of the second photoresist layer is placed over another side of the first metal layer in opposition to the side of the first metal layer;
- removing part of the second metal layer, which is uncovered with the first photoresist layer and the second photoresist layer to form a patterned second metal layer;
- and
- removing the first photoresist layer and the second photoresist layer to expose the patterned second metal layer to form a source and a drain.
A method for manufacturing a thin film transistor (TFT), comprising:
- providing a substrate;
- forming a patterned first metal layer, a semiconductor layer, and a second metal layer on the substrate in sequence, wherein the patterned first metal layer comprises a gate;
- forming a patterned first photoresist layer on the second metal layer, wherein part of the first photoresist layer is placed over one side of the first metal layer;
- forming a patterned second photoresist layer on the second metal layer by utilizing a mask, wherein part of the second photoresist layer connecting to the first photoresist layer has a thickness smaller than that of another part of the second photoresist layer;
- removing part of the second metal layer and the semiconductor layer, which are uncovered with the first photoresist layer and the second photoresist layer, to form a patterned second metal layer;
- removing part of the first photoresist layer and part of the second photoresist layer to expose part of the patterned second metal layer;
- and
- removing exposed part of the patterned second metal layer, remaining part of the first photoresist layer, and remaining part of the second photoresist layer to expose the patterned second metal layer to form a source and a drain.
A method for manufacturing a thin film transistor (TFT), comprising:
- providing a substrate;
- forming a patterned first metal layer, a patterned semiconductor layer, and a second metal layer on the substrate in sequence, wherein the patterned first metal layer comprises a gate;
- forming a patterned first photoresist layer on the second metal layer, wherein part of the first photoresist layer is placed over one side of the first metal layer;
- removing part of the second metal layer uncovered with the first photoresist layer to form a source;
- forming a transparent conductive layer on the substrate, the second metal layer, and the first photoresist layer;
- forming a patterned second photoresist layer on the transparent conductive layer, wherein the patterned second photoresist layer and the source is not overlapped;
- and
- removing part of the transparent conductive layer uncovered with the patterned second photoresist layer to form a pixel electrode.
A thin film transistor substrate used for a liquid crystal display devices, comprising:
- a base;
- and
- a plurality of thin film transistors disposed on the base;
- wherein at least one of the thin film transistor has a gate layer, a source/drain layer, and a semiconductor layer, having a channel length of about 1.5 μm to 4.0 μm.
Dependencies are inferred from the claim text.